Research

Dr. Peng Wu's research focuses on novel nanoelectronic devices based on 2D materials for more energy-efficient and secure computing. His research covers experimental demostrations as well as simulation and modeling. Please refer to the individual projects below for more details.

Experiment

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2D Tunnel FET

Reconfigurable black phosphorus TFET

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2D secure circuit

Logic locking implemented by 2D reconfigurable BP FETs

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2D CMOS inverter

Complementary BP FETs and inverter demonstration

Simulation & Modeling

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Cold-source FET (CS-FET)

Cold-source/Dirac-source FET for low-power, steep-slope device using 2D materials

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Cross-coupled gated tunneling diode (XTD)

Novel tunneling diode design with NDR behavior and 10⁵ PVCR enabling compact SRAM cell

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Artificial "negative capacitance" effect

Sub-60 mV/dec switching observed in "NC-FET" without ferroelectric component