Publications

Please check my Google Scholar profile for the latest publication list.

2024

  1. Nat. Mater.
    2D materials for logic device scaling
    Peng Wu, Tianyi Zhang, Jiadi Zhu, Tomás Palacios, and Jing Kong
    Nature Materials, 23, 23–25, 2024
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2023

  1. Nat. Electron.
  2. Nano Lett.
    High-Performance Complementary Circuits from Two-Dimensional MoTe2
    Jun Cai, Zheng Sun, Peng Wu, Rahul Tripathi, Hao-Yu Lan, Jing Kong, Zhihong Chen, and Joerg Appenzeller
    Nano Letters, 23, 10939–10945, 2023
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  3. Nat. Rev. Mater.
    Vapour-phase deposition of two-dimensional layered chalcogenides
    Tianyi Zhang, Jiangtao Wang, Peng Wu, Ang-Yu Lu, and Jing Kong
    Nature Reviews Materials, 8, 799–821, 2023
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  4. Patent

2022

  1. IEEE T-ED
    Design Considerations for 2-D Dirac-Source FETs—Part I: Basic Operation and Device Parameters
    Peng Wu, and Joerg Appenzeller
    IEEE Transactions on Electron Devices, 69(8), 4674–4680, 2022
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  2. IEEE T-ED
    Design Considerations for 2-D Dirac-Source FETs—Part II: Nonidealities and Benchmarking
    Peng Wu, and Joerg Appenzeller
    IEEE Transactions on Electron Devices, 69(8), 4681–4685, 2022
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  3. IEEE T-ED
    Explaining Steep-Slope Switching in Carbon Nanotube Dirac-Source Field-Effect Transistors
    Peng Wu, and Joerg Appenzeller
    IEEE Transactions on Electron Devices, 69(9), 5270–5275, 2022
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  4. IEEE T-ED
    Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept
    Peng Wu, Mengyuan Li, Bo Zhou, Xiaobo Sharon Hu, and Joerg Appenzeller
    IEEE Transactions on Electron Devices, 69(11), 6078–6084, 2022
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  5. IEEE T-ED
    Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part II: SRAM Circuit
    Mengyuan Li, Peng Wu, Bo Zhou, Joerg Appenzeller, and Xiaobo Sharon Hu
    IEEE Transactions on Electron Devices, 69(11), 6085–6088, 2022
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  6. ACS Nano
    Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
    Zheng Sun, Chin-Sheng Pang, Peng Wu, Terry YT Hung, Ming-Yang Li, San Lin Liew, Chao-Ching Cheng, Han Wang, H-S Philip Wong, Lain-Jong Li, Iuliana Radu, Zhihong Chen, and Joerg Appenzeller
    ACS nano, 16(9), 14942–14950, 2022
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2021

  1. Nat. Electron.
  2. IEEE T-ED
    Thickness-Dependent Study of High-Performance WS2-FETs With Ultrascaled Channel Lengths
    Chin-Sheng Pang, Peng Wu, Joerg Appenzeller, and Zhihong Chen
    IEEE Transactions on Electron Devices, 68(4), 2123–2129, 2021
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  3. ACS Nano
  4. Appl. Phys. Rev.
    Memory applications from 2D materials
    Chin-Cheng Chiang, Vaibhav Ostwal, Peng Wu, Chin-Sheng Pang, Feng Zhang, Zhihong Chen, and Joerg Appenzeller
    Applied Physics Reviews, 8(2), 021306, 2021
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  5. Small
    Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation
    Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry YT Hung, Shiqi Guo, Mona E Zaghloul, Sergiy Krylyuk, Albert V Davydov, Joerg Appenzeller, and Zhihong Chen
    Small, 17(28), 2100940, 2021
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  6. PhD Thesis
    Two-Dimensional Nano-Transistors for Steep-Slope Devices and Hardware Security
    Peng Wu
    PhD Thesis, Purdue University Graduate School, 2021
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2020

  1. IEDM
    Sub-1nm EOT WS2-FET with IDS>600μA/μm at VDS=1V and SS<70mV/dec at LG=40nm
    Chin-Sheng Pang, Peng Wu, Joerg Appenzeller, and Zhihong Chen
    In 2020 IEEE International Electron Devices Meeting (IEDM), 3–4, 2020
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  2. DRC
    Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures
    Theresia Knobloch, Jakob Michl, Dominic Waldhör, Yury Illarionov, Bernhard Stampfer, Alexander Grill, Ruiping Zhou, Peng Wu, Michael Waltl, Joerg Appenzeller, and Tibor Grasser
    In Proceedings of the Device Research Conference (DRC), 52–53, 2020
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2019

  1. IEEE EDL
  2. APL Mat.

2018

  1. ACS Nano
    Complementary Black Phosphorus Tunneling Field-Effect Transistors
    Peng Wu, Tarek Ameen, Huairuo Zhang, Leonid A Bendersky, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Albert V Davydov, and Joerg Appenzeller
    ACS nano, 13(1), 377–385, 2018
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  2. ACS Nano
    Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
    Bernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, Theresia Knobloch, Peng Wu, Michael Waltl, Alexander Grill, Joerg Appenzeller, and Tibor Grasser
    ACS nano, 12(6), 5368–5375, 2018
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  3. DRC

2017

  1. Sci. Rep.
    Understanding contact gating in Schottky barrier transistors from 2D channels
    Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu, and Joerg Appenzeller
    Scientific reports, 7(1), 12596, 2017
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  2. DRC
    First demonstration of band-to-band tunneling in black phosphorus
    Peng Wu, Abhijith Prakash, and Joerg Appenzeller
    In 2017 75th Annual Device Research Conference (DRC), 1–2, 2017
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2015

  1. IRPS
    Investigation of nitrogen enhanced NBTI effect using the universal prediction model
    Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, and Mansun Chan
    In 2015 IEEE International Reliability Physics Symposium, Xt–5, 2015
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  2. SISPAD
    Channel-potential based compact model of double-gate tunneling FETs considering channel-length scaling
    Peng Wu, Jinyu Zhang, Li Zhang, and Zhiping Yu
    In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 317–320, 2015
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