6.777J/2.751J Material Property Database

 

Material: Titanium (PVD)

 

Application:  Titanium has good adhesion to silicon and silicon dioxide and is frequently used

as an adhesion layer for less adhesive metals such as gold [Williams2003]. Titanium is also used in –prosthetics and for coating for corrosion protection.

 

Deposition:  Ti is usually sputtered, using either standard magnetron sputtering, collimated sputtering or ionized sputtering for good converage in contact of via bottoms [Pummer p566].  The film properties depend on deposition conditions such as pressure, power (plasma), temperature and Ar/N2 ratio.

 

Property

Value

Reference

Mass density

4510 kg/m^3

CRC Materials Science and Engineering Handbook, p.46

 

4.5 g/cc

www.matweb.com

4.54 g/cm3

Handbook of Chemical Vapor Deposition - Principles, Technology and Applications (2nd Edition) ©1999

 

Young's modulus

102.6 GPa

Thin Solid Films,270(1995), p.263.

Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.

169.9 GPa

Plummer, Table 11-4, page 697

123±21 GPa

C O'Mahony, M Hill, P J Hughes and W A Lane , “Titanium as a micromechanical material”, 
J. Micromech. Microeng. 12 No 4 (July 2002) 438-443

116 GPa

www.matweb.com

Poisson ratio

0.34

www.matweb.com

0.32

 

http://www.rti-intl.com/tag/tiroom.htm

Stiffness constants

Crystal structure: hexagonal (á), changes to cubic in a sluggish

transformation at 800°C

 

Tensile or fracture strength

Strain,limiting

 

0.004

Thin film,used in semiconductor fabrication. IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174

 

Hardness

 

81-143 kg mm-2

70 kg mm-2

Plummer, Table 11-4, page 697

www.matweb.com

Residual stress on silicon

439±41 MPa

C O'Mahony, M Hill, P J Hughes and W A Lane, “Titanium as a micromechanical material”,
J. Micromech. Microeng. 12 No 4 (July 2002) 438-443

Specific heat

522.5 J/kg/K at T=25 C.

CRC Materials Science and Engineering Handbook, p.261

528 J/kg/K

www.matweb.com

 

Gremlin database (GM0303SF:Substances:Q08 hit 2, GRN 80946)

340051;LitLink; Vol. Ti: MVol.; Pages 156 - 160.

340075;LitLink; Jaeger, F. M.; Rosenbohm, E.; Fonteyne, R.; PKNAAU; Proc. K. Ned. Akad. Wet.; Vol. 39; ( 1936 ) 445 - 453.

340076;LitLink; Jaeger, F. M.; Rosenbohm, E.; Fonteyne, R.; Rec. Trav. chim.; Vol. 55; ( 1936 ) 618 - 625.

Thermal conductivity

17 W/m-K

www.matweb.com

21.9 W/mK at  T=25 C

Handbook of Chemical Vapor Deposition - Principles, Technology and Applications (2nd Edition)
©1999

 

21.9 W/m/K at T=300 K.

CRC Materials Science and Engineering Handbook, p.274-276

Thermal expansion coefficient: from

 

9.5 ppm/K in the0-300C range

Bonding properties of metals anodically bonded to glass, Sensors and Actuators A: Physical, In Press, Corrected Proof, Available online 4 February 2004,
Danick Briand, Patrick Weber and Nicolaas F. de Rooij

Thermal expansion coefficient

8.41 x 10-6 C-1

Plummer, Table 11-4, page 697

Melting Point

1650 - 1670 °C

1660 °C
1670 °C

www.matweb.com

Plummer, Table 11-4, page 697

Plummer, Table 11-2, page 688

Dielectric constant

Not found

 

Index of refraction

(at 25C)

Matlab plot made with 100 points from the paper: (Gremlin database)

Antonov, V. N.; Kirillova, M. M.; Krasovskiy,

      Ye. Ye.; Kurmayeva, L. D.; Minulina, N. V.; FMMTAK; Fiz. Met. Metallov.;

      Vol. 69; ( 1990 ) 83 - 88; Russian; PHMMA6; Phys. Met. Metallogr. (Engl.

      Transl.); Vol. 69/6; ( 1990 ) 78 - 83

Electrical conductivity/resistivity

Thin Films of Titanium and Titanium Oxide for Microminiaturization
Huber, F.;
Component Parts, IEEE Transactions on , Volume: 11 , Issue: 2 , Jun 1964
Pages:38 - 47

40-70 mW cm

Plummer, Table 11-2, page 688

55.4 mW cm

www.matweb.com

43 mW cm

Handbook of Chemical Vapor Deposition - Principles, Technology and Applications (2nd Edition) ©1999

 

~50mWcm Ohmic contact, stable up to 400C/30min

Yale Stmusser , “CHARACTERIZATION IN SILICON PROCESSING”,  BUTTERWORTH-HEINEMANN

Magnetic permeability

1.00005

http://www.rti-intl.com/tag/tiroom.htm

Magnetic Susceptibility

3.17 x 10-6 cm3/g

 

http://www.rti-intl.com/tag/tiroom.htm

Piezoresistivity

Not found

 

Piezoelectricity

Not found

 

Wet etching method

(these rates apply to sputtered Ti under the conditions in [1]):

 

Titanium wet etch: 20 H2O : 1 H2O2 :1 HF wet sink @ ~20C, etch rate: 1100 nm/min.

[Williams2003] Williams et al, "Etch Rates for Micromachining part II", Journal of Microelectromechanichs, Vol 12, No. 6, December 2003.

[Williams1996] Williams et al, "Etch Rates for Micromachining", Journal of Microelectromechanichs, Vol 5, No. 4, December 1996.etch

 

 

Isotropic silicon etchant (126 HNO3 : 60 H2O : 5 NH4F), etch rate: 300nm/min.

 

10:1 HF (10 H2O: 1 49%HF) @ ~20C, etch rate: 1100 nm/min.

 

5:1 BHF @ RT: etch rate (fast) > 1000nm/min.

 

Piranha [target = clean] (~50 H2SO4 : 1 H2O2) @ 120C : 240nm/min.

[Williams2003] Williams et al, "Etch Rates for Micromachining part II", Journal of Microelectromechanichs, Vol 12, No. 6, December 2003.

[Williams1996] Williams et al, "Etch Rates for Micromachining", Journal of Microelectromechanichs, Vol 5, No. 4, December 1996.etch

 

 

Plasma etching method

Ion milling [target = general] with Ar ions at 500V ~1mA/cm2, normal incidence: 38 nm/min

KOH: makes the Ti layer "soft" (no quantitative data)

XeFe2 at 2.6mtorr in homemade chamber, etch rate: 29nm/min (very selective over Al).

[Williams2003] Williams et al, "Etch Rates for Micromachining part II", Journal of Microelectromechanichs, Vol 12, No. 6, December 2003.

[Williams1996] Williams et al, "Etch Rates for Micromachining", Journal of Microelectromechanichs, Vol 5, No. 4, December 1996.etch

 

 

chlorine, boron trichloride, nitrogen, etch rate: 0.7 µm/min.

selectivity:

photoresist-> 1:2, silicon dioxide-> 1:6,

http://www.mems- exchange.org/catalog/P2131/

 

Adhesion to silicon dioxide

Good adhesion to silicon and to silicon dioxide

Plummer

Biocompatibility

The processing of surgical implants from pure titanium
Arsenjev, A.P.; Arsenjev, P.A.; Evdokimov, A.A.; Makaricheva, E.U.; Sheinin, M.J.;
Biomedical Engineering Conference, 1996., Proceedings of the 1996 Fifteenth Southern , 29-31 March 1996
Pages:384 - 385

“For medical implants, titanium is considered one of the most biocompatible materials available, especially where direct contact to tissue or bone is required (i.e. endosseuos dental implants or porous uncemented orthopedic implants). See the individual titanium alloy datasheets for specific applications.”

www.matweb.com

“Titanium and titanium alloy implants are widely used in medicine for their biocompatibility, good mechanical

properties and excellent corrosion resistance”

C Madore and D Landolt, “Electrochemical micromachining of

controlled topographies on titanium

for biological applications”, J. Micromech. Microeng. 7 (1997) 270–275. Printed in the UK PII: S0960-1317(97)84134-4

 

Hydrophobicity

Surface contact angle: 54±5o – (moderately wettable  / hydrophilic surface)

 

Relationship between surface properties (roughness, wettability) of titanium and titanium alloys and cell behaviour
Ponsonnet, L. (Lab.d'Ing./Fonct. Surfac., Ecole Centrale de Lyon, UMR 5513); Reybier, K.; Jaffrezic, N.; Comte, V.; Lagneau, C.; Lissac, M.; Martelet, C. Source: Materials Science and Engineering C, v 23, n 4, Jun 10, 2003, p 551-560
ISSN: 0928-4931

Vapor Pressure

Gremlin database

(GRN 16313)

340051;LitLink; Vol. Ti: MVol.; Pages 156 - 160.

340059;LitLink; Blocher, J. M.; Campbell, I. E.; JACSAT; J. Am. Chem. Soc.; Vol. 71; ( 1949 ) 4040 - 4042.

Critical Superconducting Temperature

0.36 - 0.44 K

www.matweb.com