6.777J/2.751J Material Property Database

 

Material: Copper – PVD or Electroplated

 

Property

Value

Reference

Image/URL (optional)

Mass density

8960 kg/m^3

CRC Handbook of Chemistry and Physics (2003-2004)

 

Young's modulus

130 Gpa

L.B. Freund, S. Suresh.  Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003)

 

Poisson ratio

0.34

L.B. Freund, S. Suresh.  Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003)

 

Stiffness Constants

C11 = 168.3 Gpa,

C12 = 1.221 Gpa,

C44 = 0.757 Gpa

CRC Handbook of Chemistry and Physics (2003-2004)

 

Tensile or fracture strength

193 Mpa [1] – 262 Mpa [2]

[1] J.W. Dini, Electrodeposition – The Materials Science of Coatings and Substrates

[2] D. Read, J. Dally, “Mechanical Behavior of Aluminum and Copper Thin Films.” In Mechanics and Materials for Electronic Packaging: Vol. 2 (1994), ASME

 

Residual stress on silicon

0 – 400 Mpa

H.M. Choi, S.K. Choi et. al. “Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering.”  Thin Solid Films 358 (2000) 202-205.

 

Specific heat

385 J/kg*K (@ 300 K)

CRC Handbook of Chemistry and Physics (2003-2004)

 

Thermal conductivity

401 W/m*K (@ 300K)

CRC Handbook of Chemistry and Physics (2003-2004)

 

Dielectric constant

 

 

 

Index of refraction

0.15 @ 700 nm

ASM Specialty Handbook: Copper and Copper Alloys (2001)

 

Electrical conductivity

6.00 x 10^-7 Ohm^-1*m^-1 – 1.25 x 10^-7 Ohm^-1*m^-1

H.M. Choi, S.K. Choi et. al. “Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering.”  Thin Solid Films 358 (2000) 202-205.

 

Magnetic permeability

~1 – Diamagnetic

ASM Specialty Handbook: Copper and Copper Alloys (2001)

 

Piezoresistivity

p11 = 5.7 x 10^-3 Gpa ^-1

p12 = 6.3 x 10^-3 Gpa^-1

C. Hu, Y. Gao, Z. Sheng.  “The piezoresistance coefficients of copper and copper-nickel alloys.”  Journal of Materials Science 35 (2000) 381-386

 

Piezoelectricity

 

 

 

Wet etching method

Sulfuric Acid/Hydrogen peroxide

MEMS Exchange (http://www.mems-exchange.org/)

 

Plasma etching method

Cl2, HCl and HBr plasma etching

Y. Kuo, S. Lee.  “Room temperature copper etching based on a plasma-copper reaction.”  Applied Physics Letters, 78 (7)  February 2001.

 

Adhesion to silicon dioxide

Variant (1.5 – 3.5 J/m^2).  Generally weak and improved with alloying, use of an adhesion layer, or surface preparation

[1] K. Nagao, J. Neaton, N. Ashcroft. “Ab initio study of adhesion at Cu/SiO2 interface.” (Cornell Univ. and Rutgers Univ. - Presentation)

 

[2] P.J. Ding, W.A. Lanford, S. Hymes, S.P. Murarka. “Oxidation resistant high conductivity films”  Applied Physics Letters 64 (21) May 1994

www.ccmr.cornell.edu/IRG-Glass/nagao.ppt

Biocompatibility

YES – if properly coated (ie. Silicone)

E. Pina, E. Burgos, et. al. Magnetoelastic sensor as a probe for muscular activity, an in vivo experiment.”  Sensors and  Actuators A 91 (2001) 99-102

 

Hydrophobicity

5 degrees with water (“polished” copper)

“Coating Lubricous Surfaces Paper”  VITEK research Corporation (www.vitekres.com)