6.777J/2.751J Material Property Database

 

Material: PVD Chromium

 

Property

Value

Reference

Image/URL (optional)

Mass density

7.19 g/cc

Matweb

 

Young's modulus

140 GPA

(Thin film) IEEE, MicroElectroMechanical Systems Workshop, Feb 1990, Napa Valley, California, p. 174.

 

Poisson ratio

0.21

Goodfellow.com

 

Stiffness Constants

0.002 (limiting strain)

IEEE, MicroElectroMechanical Systems Workshop, Feb 1990, Napa Valley, California, p. 174.

 

Tensile or fracture strength

282 MPa

Ultimate Tensile Strength (Recrystallized) Matweb

 

Residual stress on silicon

Tensile or compressive depending on normalized energy of deposition

Hsieh, J.H., et al.  “Effects of energetic particle bombardment on residual stress, microstrain and grainsize of plasma-assisted PVD Cr thin film.”  Thin Solid Films.  v424.  22 Jan 2003, p 103-106.

(See Below)

Specific heat

0.461 J/g-°C

Matweb

 

Thermal conductivity

69.1 W/m-°K

Matweb

 

Dielectric constant

12 (pure)
7.7 – 8.0 (ore)

Dielectric Constant Guide

 

Index of refraction

2.97

http://en.wikipedia.org/wiki/List_of_indices

_of_refraction

 

Electrical conductivity

7.69 E4 /W-cm

 (@ 20°C) Matweb

 

Magnetic permeability

mo(1+cm)

cm = 3.5e-6 (cgs)  Matweb

 

Piezoresistivity

 

 

 

Piezoelectricity

N/A

N/A

 

Wet etching method

Acidic solution of cerric ammonium nitrate

Buck, P. and Grenon, B.  “A comparison of wet and dry chrome etching with the CORE-2564.”  Proceedings of the SPIE – The International Society for Optical Engineering.  v2087, 1994, p42-49.

 

Plasma etching method

Electron beam irradiation enhanced with XeF2 gas

Wang, Jianhua, et al.  “Etching characteristics of chromium thin films by an electron beam induced-surface reaction.”  Semiconductor Science and Technology.  v18, April 2003, p199-205.

 

Adhesion to silicon dioxide

 

 

 

Biocompatibility

Toxic (unless coated)

http://periodic.lanl.gov/elements/24.html

 

Hydrophobicity

Contact Angle between  20 °– 60°

Kuze, Eiji, et al.  “Contact angle of water on chromium nitride thin film prepared on three dimensional materials by chromium plasma-based ion implantation.”  Surface Coatings and Technology.   v158-159.  September 2002,  pp577-581.

 

Melting Point

1860°C

Matweb

 

CTE

6.2 mm/m-°C

(over a range of 20°C – 100°C) Matweb

 

 

 

 

Residual stress on silicon: