6.777J/2.751J Material Property Database

 

Material: Indium Tin Oxide (ITO)

 

Property

Value

Reference

Image/URL (optional)

Mass density

6.8 g/cm3

J Vac Sci Tech A 19:5(2043-7); 2001

 

Young's modulus

(sputtered, 10wt% SnO2)

 

116 GPa

 

Thin Solid Films 278:1-2(12-17); 1995

 

Poisson ratio

(sputtered, 10wt% SnO2)

 

0.35

 

Thin Solid Films 278:1-2(12-17); 1995

 

Stiffness Constants

 

 

 

Tensile or fracture strength

failure strain (105 nm film)

failure strain (16.8 nm film)

 

0.022

0.003

 

MRS Symp Proc 666 (F3.24.1 – 12); 2001

 

Residual stress on silicon

(sputtered, 10wt% SnO2)

 

-2.1 ~ -2.3 GPa

 

Thin Solid Films 278:1-2(12-17); 1995

 

Specific heat

 

 

 

Thermal conductivity

 

 

 

Dielectric constant

 

 

 

Index of refraction

(increases with anneal)

~1.7 @633 nm

1.8 - 2.0

Appl Surf Sci 179:1-4(181-90); 2001

J Vac Sci Tech A 19:5(2514-21); 2001

 

Electrical conductivity

(“standard” sputtered)

(epi, 5.7wt% SnO2)

 

~104 S/cm

1.3 x 104 S/cm

Thin Solid Films 411:1(1-5); 2002

Vacuum 66:3-4(419-25); 2002

 

Magnetic permeability

 

 

 

Piezoresistivity: gage factor (sputtered)

(laser deposited)

 

0.2 ~ -14.7

2.04 ~ -77.71

 

J Appl Phys 91:9(6194-6); 2002

Thin Solid Films 288 (279-286); 1996

 

Piezoelectricity

 

 

 

Wet etching method

oxalic acid

HCl/HNO3

Langmuir 18:1(194-7); 2002

J Electron Mat 25:12(1806-17); 1996

 

Plasma etching method

CH4/H2/Ar

J Vac Sci Tech A 16:4(2177-86); 1998

 

Adhesion to silicon dioxide

good – in pulloff tests of 1000 Ĺ ITO and 1300-30,000 Ĺ SiO2, failures occurred in substrate rather than ITO/oxide.

Appl Surf Sci 115:1(96-102); 1997

 

Biocompatibility

no observed inhibition of cell growth; small amount of protein adsorption

Proc IEEE/EMBS Conf on Microtechnologies in Medicine & Biology (261-4);2002

 

Hydrophobicity

 

advancing qc

receding qr

varies strongly with surface treatment

28.6°-96.5°

12.3°-49.3°

J Appl Phys 86:5 (2774-8); 1999